Mott-Hubbard Scenario for the Metal-Insulator Transition in the Two Dimensional Electron Gas

We exam the experimental observations of the metal-insulator transition in Si-MOSFET and GaAs quantum well. We find that the observed critical behaviors in the magneto transport experiments can be understood within the Mott-Hubbard scenario. Disorder, while playing an important role in both metallic and insulating phases, does not affect the universal critical behaviors.