Doping the interface of Mott-Insulator heterostructures

ORAL

Abstract

Recent rapid progress in techniques for layer-by-layer growth of transition metal oxides is making new types of heterostructures available. Previous studies have demonstrated interesting charge transfer and band bending effects near interfaces between Mott insulators and band insulators [1] and between polar and non-polar insulators [2]. We propose [3] interesting effects at several different classes of heterojunctions between ABO3 perovskites based on a single-band Hubbard model studied with several different approximate treatments of electron-electron interactions. Some potentially interesting material combinations will be discussed. \newline \newline [1] A. Ohtomo, etc., Nature 419, 378 (2002). \newline [2] N. Nakagawa, etc., Nature Materials 5, 204 (2006). \newline [3] W.-C. Lee and A.H. MacDonald, Phys. Rev. B 74, 075106 (2006) and work in preparation.

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Authors

  • Wei-Cheng Lee

    Department of Physics, The University of Texas at Austin

  • Tamar Pereg-Barnea

    University of Texas at Austin, Department of Physics, The University of Texas at Austin

  • Allan MacDonald

    University of Texas at Austin, The University of Texas at Austin, U. Texas at Austin, Department of Physics, The University of Texas at Austin, The University of Texas at Austin, Department of Physics, Univ of Texas, Department of Physics, University of Texas