High temperature cross-plane Seebeck coefficient measurement of ErAs:InGaAs/InGaAlAs superlattice

ORAL

Abstract

The 3$\omega $ technique is used to measure the Seebeck coefficient across 2.4 micron superlattices made of 80$\times $((InGaAs)$_{0.6}$(lnAlAs)$_{0.4}$ -10nm / InGaAs-20 nm) films lattice matched to InP substrate. ErAs nanoparticles are randomly distributed inside the 20 nm InGaAs layer. We characterized 4 samples with different doping concentrations (from 2$\times $10$^{18}$ cm$^{-3}$ to 10$^{19}$cm$^{-3})$ in a temperature range of 300K to 600 K. A significant increase in the cross plane Seebeck coefficient compared to the in plane one is observed. Comparison with DC measurement shows that the 3$\omega $ method is more accurate especially at high temperatures. Theoretical analysis based on the solution of the coupled Schr\"{o}dinger and Poisson equations, together with modified Boltzmann transport equation is used to explain the experimental results.

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Authors

  • Zhixi Bian

    Electrical Engineering Department, University of California, Santa Cruz, California 95064, Electrical Engineering Department, University of California, Santa Cruz, University of California, Santa Cruz

  • Mona Zebarjadi

    Electrical Engineering Department, University of California, Santa Cruz, California 95064, University of California, Santa Cruz

  • Ali Shakouri

    Electrical Engineering Department, University of California, Santa Cruz, California 95064, University of California,Santa Cruz, Electrical Engineering Department, University of California, Santa Cruz, University of California, Santa Cruz, University of California Santa Cruz

  • Gehong Zeng

    Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, Department of Electrical and Computer Engineering, University of California, Santa Barbara, University of California, Santa Barbara

  • John Bowers