Raman Study of Phonon Softening in Individual Metallic Single Wall Nanotubes
ORAL
Abstract
We have studied the Breit-Wigner-Fano (BWF) lineshape and frequency of the G$^{-}$ Raman mode in individual metallic nanotubes as function of the Fermi level position. Single wall carbon nanotubes are grown from dispersed nanoparticles and are doped electrostatically by means of a polymer electrolyte gate. The frequency of the G$^{-}$ phonon in metallic tubes is very sensitive to the position of the Fermi level. As the Fermi level is tuned below and above the Fermi point, a semiconducting like G-band is recovered both in terms of frequency and linewidth. Near the Fermi point, the downshift of the G$^{-}$ frequency with respect to that of semiconducting tubes reaches a maximum of up to 50cm$^{-1}$. The doping and diameter dependence of the phonon softening are explained in terms of electron phonon coupling.
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Authors
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Hootan Farhat
MIT
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Hyungbin Son
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, MIT
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Jing Kong
MIT