Non-polar GaN structures on $\gamma $-LiAlO$_{2}$ grown by plasma-assisted molecular beam epitaxy

A-plane lithium aluminate (LAO) in $\gamma $-phase crystal structure, $\gamma $-LiAlO$_{2}$ (100), was used as the substrate which was grown by Czochralski pulling method. With a lattice mismatch of [0001]GaN$\vert \vert $[010]LAO $\sim $ 0.3{\%} and [11\underline {2}0]GaN$\vert \vert $[001]LAO $\sim $1.7{\%}, $\gamma $-LiAlO$_{2}$ (100) has a much smaller lattice mismatch with the GaN (1\underline {1}00) than the conventional substrates. M-plane GaN epilayer was successfully grown by plasma-assisted molecular beam epitaxy. X-ray diffraction theta/two-theta scan shows a diffraction peak due to m-plane GaN. Raman scattering confirms Raman modes from the GaN (1\underline {1}00) structure. Cathodoluminescence yields a peak at 363 nm at room temperature. Nanostructures were explored also. Comparisons to structures grown on the c-plane will be presented.