Carbon Nanotube Low Power Integrated Circuit.

ORAL

Abstract

Identifying a material that can outperform silicon in terms of device density, power consumption and performance is one of the main goals of today's nano-electronics effort. Carbon nanotubes are considered to offer the greatest potential in this context. So far, the emphasis has been on fabricating and characterizing individual nanotube devices. A critical next step is the construction of integrated circuits. Complementary metal-oxide semiconductor (CMOS) technology is the dominant approach for microprocessors, memories, and many other applications, in particular due to its small power consumption. Here, we demonstrate the first CMOS-type, high performance, multiple components logic circuit based on a single carbon nanotube molecule.

Authors

  • Zhihong Chen

  • Joerg Appenzeller

    IBM T. J. Watson Research Center

  • Yu-Ming Lin

    IBM T.J. Watson Research Center

  • Jennifer Sippel-Oakley

  • Andrew G. Rinzler

    University of Florida, Physics Department, Dept. of Physics, University of Florida, Gainesville, FL

  • Jinyao Tang

    Columbia University, Department of Chemistry

  • Shalom Wind

    Columbia University, Department of Applied Physics and Applied Mathematics, Columbia University

  • Paul M. Solomon

  • Phaedon Avouris

    IBM Research Division, IBM T.J. Watson Research Center, IBM T. J. Watson Research Center, IBM - Watson Research Center