Raman scattering study of low energy charge dynamics in the normal state of Pr$_{2-x}$Ce$_{x}$CuO$_{4-\delta }$

Some of the normal state properties of the electron-doped (n-doped) superconducting cuprates R$_{2-x}$Ce$_{x}$CuO$_{4-\delta }$(R = La, Pr, Nd, Sm) are different from those of the hole-doped (p-doped) cuprates. In the n-doped cuprates at optimal doping (x = 0.15) the dc resistivity is a quadratic function of temperature whereas in the p-doped cuprates it is linear in temperature. The charge carriers in p-doped cuprates are holes whereas in the n-doped cuprates both electronlike and holelike carriers exist near optimal doping; the electronlike carriers reside near ($\pm \pi $/a, $\pm \pi $/4a) and ($\pm \pi $/4a, $\pm \pi $/a) regions and the holelike carriers reside near ($\pm \pi $/2a, $\pm \pi $/2a) regions of the Brillouin Zone. We have performed temperature and doping dependent Raman scattering study in the normal state of the n-doped superconducting cuprate Pr$_{2-x}$Ce$_{x}$CuO$_{4-\delta }$. Using polarized light we have isolated the low energy dynamics of the electronlike and holelike carriers. We compare Raman data in the B$_{1g}$ and B$_{2g}$ channels to dc resistivity and discuss the implications.