Vibrational Lifetimes and Frequency-Gap Law of Hydrogen Bending Modes in Semiconductors

ORAL

Abstract

Vibrational lifetimes of hydrogen and deuterium related bending modes in semiconductors are measured by transient bleaching spectroscopy and high-resolution infrared absorption spectroscopy. We find that the vibrational lifetimes follow a universal frequency-gap law, i.e., the decay time increases exponentially with increasing decay order, with values ranging from 1 ps for a one-phonon process to 265 ps for a four-phonon process. The temperature dependence of the lifetime shows that the bending mode decays by lowest-order multi-phonon process. Our results provide new insights into vibrational decay and the giant isotope effect of hydrogen in semiconductor systems.

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Authors

  • Baozhou Sun

  • Gunter Luepke

    Department of Applied Science, The College of William and Mary, Williamsburg, VA, Department of Applied Science, College of William and Mary, Department of Applied Science, the College of William and Mary, The College of William and Mary

  • G.A. Shi

  • M. Stavola

    Department of Physics, Lehigh University, Lehigh University

  • Nageswara Sunkaranam

  • Sriram Dixit

    Interdisciplinary Materials Science Program, Vanderbilt University

  • Norman Tolk

    Department of Physics and Astronomy, Vanderbilt University, Vanderbilt University

  • Leonard Feldman

    Department of Physics and Astronomy \& Interdisciplinary Materials Science Program, Vanderbilt University, Vanderbilt University, Department of Physics and Astronomy, Vanderbilt University, Department of Physics and Astronomy \& Institute of Nanoscale Science and Engineering, Vanderbilt University, Nashville, Tennessee 37235