High field magnetoresistance in $p$-(In,Mn)As/$n$-InAs heterojunctions

The high field magnetoresistive properties of a $p$-In$_{0.96}$Mn$_{0.04}$As/$n$-InAs junction have been measured. The heterojunctions were formed by epitaxially depositing an InMnAs thin film on an InAs substrate using metal-organic vapor phase epitaxy. Under forward bias, a large, nonsaturating magnetoresistance is observed at temperatures from 25 to 295 K in fields up to 9 T. At room temperature, the magnetoresistance increases linearly with magnetic field from 1.5 to 9 T and is greater than 700 {\%} at 9 T. The magnetoresistance can be simulated using a modified diode equation, including a field-dependent series magnetoresistance.