Hysteresis in single-walled carbon nanotube field--effect transistors: Experiments, a model, and implications
POSTER
Abstract
Authors
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Swastik Kar
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy New York, Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York
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S. Talapatra
Rensselaer Nanotechnology Center, Rensselaer Polytechnic Institute, Troy New York, Rensselaer Nanotechnology Center and Department of MS\&E, Rensselaer Polytechnic Institute, Troy NY.
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A. Vijayaraghavan
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy New York
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Caterina Soldano
Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy New York, Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York
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R. Vajtai
Rensselaer Nanotechnology Center, Rensselaer Polytechnic Institute, Troy New York
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Saroj Nayak
Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy New York, Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York
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Omkaram Nalamasu
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Pulickel M. Ajayan
Rensselaer Polytechnic Institute, Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy New York, Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York