Quantum Hall Effect in Graphene
ORAL
Abstract
We study the integer and fractional quantum Hall effect on a honeycomb lattice at half-filling (graphene) in the presence of disorder and electron-electron interactions. We show that the interactions between the delocalized chiral edge states (generated by the magnetic field) and Anderson-localized surface states (created by the presence of zig-zag edges) lead to edge reconstruction. As a consequence, the point contact tunneling on a graphene edge has a non-universal tunneling exponent, and the Hall conductivity is not perfectly quantized in units of $e^2/h$. We argue that the magneto-transport properties of graphene depend strongly on the strength of electron-electron interactions, the amount of disorder, and the details of the edges.
–
Authors
-
Antonio H. Casto Neto
Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, MA 02215, USA, Boston University, Department of Physics, Boston University, Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, USA
-
Francisco Guinea
Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco E28049 Madrid, Spain, Inst de Ciencia de Materiales de Madrid (CSIC) Cantoblanco 28049 MADRID, Instituto de Ciencia de Materiales de Madrid, Spain
-
Nuno M.R. Peres
Universidade do Minho, Portugal