2D patterned ferromagnetic semiconductors for planar spintronics

ORAL

Abstract

Fabrication of III-Mn-V ferromagnetic semiconductors by way of Mn ion implantation followed by pulsed laser melting (II-PLM) allows for the unique possibility of lateral patterning using optical and e-beam lithography. We have performed II-PLM on resist patterned substrates to create isolated ferromagnetically active Ga$_{1-x}$Mn$_{x}$As regions embedded in a GaAs substrate. We have prepared a uniform Ga$_{1-x}$Mn$_{x}$As film as well as a sample patterned with an array of Mn$^{+}$-implanted 100$\mu $m x 100$\mu $m squares that covers the equivalent of one-quarter the sample. The saturation magnetization of the patterned sample reflects this one-quarter implant area, and both samples display a T$_{C}$ of $\sim $100 K suggesting a similar maximum Mn concentration. The electrical and magnetic properties of this and other lateral structures consisting of sub-micron spaced active regions will be presented. This work was supported by the U.S. Department of Energy under contract No. DE-AC02-05CH11231.

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Authors

  • Rouin Farshchi

  • I.D. Sharp

    Materials Science and Engineering, University of California, Berkeley and Materials Sciences Division, Lawrence Berkeley National Laboratory, CA 94720

  • Mike Scarpulla

  • E.E. Haller

    Materials Sciences Div., Lawrence Berkeley National Laboratory, and Dept. of Materials Science and Engineering, University of California, Berkeley, CA, Materials Science and Engineering, University of California, Berkeley and Materials Sciences Division, Lawrence Berkeley National Laboratory, CA 94720

  • Oscar Dubon

    Dept. of Materials Science and Engineering, University of California and Lawrence Berkeley National Laboratory, Berkeley CA 94720, Univ. of California, Berkeley, CA 94720, Berkeley Lab, Berkeley, CA 94720

  • Jeffrey Beeman

    Berkeley Lab, Berkeley, CA 94720

  • Soonjoo Seo

  • Paul Evans

    University of Wisconsin-Madison, Univ. of Wisconsin, Madison, WI 53706