Formation of SiOx nanoflowers during the VLS growth of silicon nanowires

ORAL

Abstract

We report the formation of SiOx nanoflowers at the tip of the VLS grown silicon nanowires. The morphology and complexity of the flowers can be reproducibly controlled by varying the growth conditions. ~Structural and compositional analysis of the nanoflowers formed at different stages (from open geometry to close geometry) using TEM and SEM with energy dispersive spectroscopy reveal that the flower results from selective oxidation of silicon at the interface between nanowire and the gold catalyst. ~There is no detectable oxidation in the wire region. The underlying mechanism and the intriguing pattern formation will be discussed.

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Authors

  • Joonho Bae

  • Rebecca Thompson-Flagg

  • Michael Marder

    The University of Texas at Austin, Center for Nonlinear Dynamics/Dept. of Physics, Physics Department, University of Texas

  • John Ekerdt

    Department of Chemical Engineering, University of Texas

  • Chih-Kang Shih

    University of Texas at Austin, Dept. of Physics, Department of Physics, the University of Texas at Austin, UT at Austin Dept. of Physics, The University of Texas at Austin, Department of Physics, the University of Texas at Austin, Austin TX 78712, Physics Department, University of Texas, The Univ. of Texas at Austin, Dept. of Physics