Pressure-temperature magnetic phase diagram of Au$_4$V investigated by electrical resistivity using Designer Diamond Anvils
ORAL
Abstract
The electrical resistivity of Au$_4$V has been measured up to a pressure of 20~GPa between room temperature and 15~K. These measurements were performed using designer diamonds, which consist of lithographically deposited tungsten micro-leads embedded within a single crystal of diamond. The electrical resistivity of Au$_4$V has a kink in its slope at 45~K under ambient pressure, which is associated with a ferromagnetic transition. Designer diamonds can be used with a diamond anvil cell to track the pressure dependence of this ferromagnetic transition, which is found to increase under the application of pressure.
–
Authors
-
Damon Jackson
Lawrence Livermore National Lab
-
Chantel Aracne
-
Sam Weir
Lawrence Livermore National Laboratory
-
Jason Jeffries
-
M. Brian Maple
University of California, San Diego, University of California San Diego and IPAPS
-
Yogesh Vohra
University of Alabama, Birmingham