Synthesis and Electrical Transport Studies of Zn-doped Ga$_2$O$_3$ Nanowires

Ga$_{2}$O$_{3}$ is a wideband gap material ($E_{g}=4.9eV$). Its one dimensional nanostructures have attracted much research effort. Ga$_{2}$O$_{3}$ nanowire is a promising material in the applications such as blue light emitter, transparent conducting oxide, and chemical sensor. However, the electronic device application of Ga$_{2}$O$_{3}$ nanowire is difficult due to its low electrical conductivity. In this work, $\beta $-Ga$_{2}$O$_ {3}$ nanowires were synthesized via catalytic chemical vapor deposition method. The diameter of the as-grown nanowires ranges from 20 to 80nm. In order to improve the electrical properties, zinc was used as a dopant. A series of material characterizations were performed to study the properties. Electron microscopy shows the morphology and crystal structure, while X-ray diffraction provides the crystal information and composition. In addition, photoluminescence spectra and photoconductivity measurements show trapping states located within the bandgap. The nanowires were also fabricated into field-effect-transistors for transport measurements. And $I-V$ and $I-V_{g}$ curves manifest QTR{it}{p}-type semiconducting behavior, and carrier concentration and mobility are estimated.