Optical properties of InGaN quantum dots

Standard nitride field effect transistors rely on the polarization based 2DEG generation on GaN/AlGaN interfaces. The disadvantage of this structural approach (sensitivity against surface charges) shall be overcome by this approach of the quaternary InAlGaN material composition. With this approach we intend to realize 2DEG at zero polarization field thus controlling charge and mobility in the channel completely by doping the (In)AlGaN barrier and adjusting the spacer layer thickness. This approach should reduce the surface charge sensitivity dramatically open up a new degree of freedom in choosing optimized parameters for nitride FETs.