ZrO2 high-K dielectric thin films for high-density field-effect doping studies

ZrO2 is a well-known high-K dielectric material with a wide band gap. We have studied the PLD deposition and properties of thin films of ZrO2 for the purpose of high-electron-density field-effect doping applications. The observed dielectric constants 24 are larger than expected for the equilibrium monoclinic crystal structure of ZrO2, suggesting higher symmetry phases are present in our films. Breakdown fields as high as 14 MV/cm are sometimes observed. These films are being used for field-effect doping studies of superconducting amorphous In-oxide thin films. In this talk, both the properties of our ZrO2 films and their use in doping studies of our In-oxide thin films will be reported. Work supported by the U.S. DoE BES.