Failure Modes in Carbon Nanotube Devices

ORAL

Abstract

We study the electrical breakdown of multiwall carbon nanotube transistor devices. Electrical transport measurements are preformed in a transmission electron microscope, allowing real-time nanometer scale imaging of device breakdown. Failure modes are correlated to changes in nanotube device behavior.

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Authors

  • Steve Konsek

    MSD, LBNL, Berkeley, Caifornia 94720 and Dept. of Physics, UC Berkeley, California, 94720, MSD,LBNL, Berkeley, Caifornia 94720 and Dept. of Physics, UC Berkeley, California, 94720

  • Shaul Aloni

    Molecular Foundry MSD, LBNL, Berkeley, Caifornia 94720 and Dept. of Physics, UC Berkeley, California, 94720

  • Brian Christopher Regan

    MSD,LBNL, Berkeley, Caifornia 94720 and Dept. of Physics, UC Berkeley, California, 94720

  • Alex Zettl

    University of California, Berkeley, Department of Physics, Department of Materials Science and Engineering, UC Berkeley; Materials Sciences Division, LBNL; Berkeley, CA 94720, Physics department, University of California at Berkeley, Department of Physics, UC Berkeley, and Materials Sciences Division, LBNL, Berkeley, California 94720, Physics Department, University of California at Berkeley, and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley CA 94720, University of California-Berkeley, MSD, LBNL, Berkeley, Caifornia 94720 and Dept. of Physics, UC Berkeley, California, 94720, MSD,LBNL, Berkeley, Caifornia 94720 and Dept. of Physics, UC Berkeley, California, 94720