GaN/InGaN/GaN high electron mobility transistor fabricated by RF-MBE

The GaN/In$_{x}$Ga$_{(1-x)}$N/GaN high electron mobility transistor (HEMT) growth on c-plane sapphire substrate by RF plasma assisted molecular beam epitaxy. The sample were investigated by reflection high-energy diffraction, high resolution x-ray diffraction, field-emission scanning electron microscopy, and Hall effect measurement. Flat interface were monitored by RHEED pattern, as well as smooth morphology determined by FESEM. The effect of the fraction factor x and InGaN thickness on electronic properties were determined from Hall measurement data. The mobility in the designed structure is around 5 cm$^{2}$/Vs at room temperature (300 $^{0} $K), but at low temperature (77 $^{0}$K) the value of mobility is increased to 400 cm$^{2}$/Vs.