Fabrication of a Ferromagnetic Semiconductor Spin Bipolar Transistor

ORAL

Abstract

We have fabricated a spin bipolar transistor that uses a bilayer of the ferromagnetic semiconductor Ga$_{(1-x)}$Mn$_{(x)}$As to provide a tunneling magnetoresistance (TMR) element in the emitter of the device. The two magnetic layers have a different manganese concentration that gives differing coercive fields and Curie temperatures. This allows the two magnetic layers to be set in parallel or anti-parallel configurations at low temperatures. TMR is clearly observed, and transistor action confirmed in the electrical characteristics of the device.

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Authors

  • Mark Field

  • Bobby Brar

  • Brian Pierce

    Rockwell Scientific

  • Chad Gallinat

  • D.D. Awschalom

    University of California Santa Barbara, Department of Physics, University of California, Santa Barbara, CA 93106, Center for Spintronics and Quantum Computation, University of California, Santa Barbara, CA 93106

  • Art Gossard

    UCSB, University of California at Santa Barbara, University of California, Santa Barbara, Materials and ECE Departments, UCSB

  • James Speck

    University of California Santa Barbara