Characterizing the Performance of Graphene Field Effect Transistors

Graphene field-effect transistors (GFETs) hold significant promise in electronics due to graphene's extraordinary, intrinsic properties. With a high carrier mobility and the potential operation beyond the THz regime, GFETs offer exciting possibilities for high-frequency applications. A thorough characterization of the GFET is of particular interest for assessing its utility for particle and radiation detection for LEGEND-1000 and other applications. To this end, the output and transfer characteristics were investigated for several GFETs of varying channel dimensions via several DC sweeps across different gate configurations. The study and its results on the GFET performance are presented.