Plasma Etching III
ORAL · GR3 · ID: 3430258
Presentations
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Plasma sheath tailoring for advanced 3D plasma etching: the effects of mask geometry, etching materials, and ion energy.
ORAL
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Publication: Jüngling et al. Appl. Phys. Lett. 12 February 2024; 124 (7): 074101.
Presenters
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Elia Jüngling
Experimental Physics II - Reactive Plasmas, Ruhr University Bochum, Germany
Authors
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Elia Jüngling
Experimental Physics II - Reactive Plasmas, Ruhr University Bochum, Germany
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Meret Nürnberg
Experimental Physics II - Reactive Plasmas, Ruhr University Bochum, Germany
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Gerardo Emiliano Gutierrez Alvarez
Experimental Physics II - Reactive Plasmas, Ruhr University Bochum, Germany
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Marc Böke
Experimental Physics II - Reactive Plasmas, Ruhr University Bochum, Germany
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Achim von Keudell
Experimental Physics II, Ruhr-University Bochum, Bochum, GERMANY, Experimental Physics II - Reactive Plasmas, Ruhr University Bochum, Germany
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Deep Potential Molecular Dynamics Simulations of Ion-Enhanced Etching of Silicon by Atomic Chlorine
ORAL
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Presenters
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Andreas Kounis-Melas
Princeton University
Authors
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Andreas Kounis-Melas
Princeton University
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Athanassios Z Panagiotopoulos
Princeton University
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David Barry Graves
Chemical & Biological Engineering Princeton University
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Atomic layer etching of sputter-deposited AlN in Cl2-Ar plasmas
ORAL
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Presenters
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Iurii Nesterenko
Silicon Austria Labs GmbH; Ruhr-University Bochum
Authors
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Iurii Nesterenko
Silicon Austria Labs GmbH; Ruhr-University Bochum
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Jon Farr
Applied Materials, Inc.
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Steffen Harzenetter
Applied Materials, Inc.
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Dmytro Solonenko
Silicon Austria Labs GmbH
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Benjamin Kalas
Silicon Austria Labs GmbH
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Thang Dao
Silicon Austria Labs GmbH
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Julian Schulze
Chair of Applied Electrodynamics and Plasma Technology, Ruhr University Bochum, Bochum, Germany
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Nikolai Andrianov
Austria Labs GmbH
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Modeling and optimization of plasma chemical etching of polysilicon in HBr/Cl2 mixture with data-driven approaches
ORAL
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Presenters
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Fedor V Oksanichenko
Moscow Institute of Physics and Technology
Authors
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Fedor V Oksanichenko
Moscow Institute of Physics and Technology
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Alexander Efremov
JSC MERI
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The effect of quenching process for the argon excited states in plasma etching
ORAL
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Presenters
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Lu Wang
Harbin Institute of Technology
Authors
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Lu Wang
Harbin Institute of Technology
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Ion Energy Distribution Function (IEDF) Simulation Applicable to Customized Bias Voltage Waveform
ORAL
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Presenters
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HyeonHo Nahm
Hanyang University
Authors
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HyeonHo Nahm
Hanyang University
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Chin-Wook Chung
Hanyang University, Department of electrical engineering, Hanyang University, Seoul, Korea1
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