Surface Semiconducting Barrier Discharges: Influence of Material Properties and Electrical Driving Parameters

Surface semiconducting barrier discharges (SeBDs) are promising for atmospheric-pressure plasma applications such as electroaerodynamic propulsion. Their uniformity and potentially higher energy density [1], compared to conventional dielectric barrier discharges (SDBDs), may originate from photoelectric and electric field effects at the plasma-semiconductor interface [2].

To better understand this interaction, we conducted a parametric study of SeBDs generated by nanosecond pulses using a pin electrode in ambient air. Discharges were produced on SiO₂-Si substrates. We varied the Si doping type and level, SiO₂ and Si thicknesses, as well as pulse amplitude, width, rise time and frequency. The resulting plasmas were characterized using ICCD imaging, current-voltage measurements, and optical emission spectroscopy.

Intermediate Si doping levels (both n- and p-type) enhanced plasma propagation and reduced peak current, suggesting a compromise between charge availability and losses within the Si. Propagation was also influenced by the SiO₂ thickness and showed optimal values, possibly linked to a balance between plasma-Si electric field coupling and surface charging of the SiO₂. In parallel, we identified a range of electrical driving conditions that allow for extended and uniform discharges without filamentation. These results provide both fundamental insights and practical guidelines for SeBD-based plasma applications.