Kinetic Analysis of Plasma Uniformity Control Using a Power-Segmented Electrode: 2D Particle-in-Cell Simulation

To achieve a uniform etch rate in plasma-based etching processes, it is essential to establish and stably control a spatially homogeneous plasma distribution. As wafer diameters continue to increase in advanced semiconductor and display manufacturing, plasma uniformity has become a critical factor affecting both process quality and cost efficiency.

In this study, we propose a method for controlling plasma uniformity using a power-segmented electrode configuration. By applying different voltages to separated electrode segments, local plasma characteristics can be manipulated. A two-dimensional axisymmetric, fully kinetic particle-in-cell (PIC) simulation was employed to model a capacitively coupled plasma (CCP) reactor with a segmented upper electrode. A separate DC bias was applied to either the inner or outer electrode segment, enabling control over plasma potential, density, ion flux, and energy distribution.

Simulation results show that the power-segmented electrode improves radial ion flux uniformity by up to 74.3% and ion energy uniformity by up to 24.2% compared to a conventional electrode. These findings demonstrate that segmented electrode configurations with tailored biasing conditions can effectively control spatial plasma properties, thereby promoting a more uniform etch rate.