Plasma Etching I
FOCUS · FT1 · ID: 1530770
Presentations
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Dynamics of Plasma Atomic Layer Etching: Molecular Dynamics Simulations and Optical Emission Spectroscopy
ORAL
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Presenters
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David B Graves
Princeton University
Authors
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David B Graves
Princeton University
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Joseph R Vella
Princeton Plasma Physics Laboratory
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Quinzen Hao
University of Houston
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Vincent Donnelly
University of Houston
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Studies on the discharge characteristics and atomic layer etching of high aspect ratio patterned-wafer in radio frequency biased inductively coupled plasma with Ar/C<sub>4</sub>F<sub>6</sub> gas mixture
ORAL
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Publication: 1) M.Y. Yoon, H.J. Yeom, J.H. Kim, W. Chegal, Y.J. Cho, D.C. Kwon, J.R. Jeong, and H.C. Lee, Phys. Plasmas 28, 063504 (2021)
Presenters
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Min Young Yoon
Korea Research Institute of Standards and science
Authors
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Min Young Yoon
Korea Research Institute of Standards and science
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HeeJung Yeom
Korea Research Institute of Standards and Science
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Chegal Won
Korea Research Institute of Standards and Science
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Yong Jai Cho
Korea Research Institute of Standards and Science
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Deuk-Chul Kwon
Korea Institute of Fusion Energy, Korea institute of Fusion Energy
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Jong-Ryul Jeong
Chungnam National University
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Jung Hyung Kim
Korea Research Institute of Standards and Science
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Hyo-Chang Lee
Korea Aerospace University
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Peculiarities of Ion and Neutral Transport in Plasma Etch Applications
ORAL · Invited
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Presenters
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Sergey Voronin
TEL TECHNOLOGY CENTER, AMERICA, LLC
Authors
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Sergey Voronin
TEL TECHNOLOGY CENTER, AMERICA, LLC
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Qi Wang
TEL TECHNOLOGY CENTER, AMERICA, LLC
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Nicholas Smieszek
TEL TECHNOLOGY CENTER, AMERICA, LLC
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Pingshan Luan
TEL Technology Center, America, LLC, TEL TECHNOLOGY CENTER, AMERICA, LLC
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Akiteru Ko
TEL TECHNOLOGY CENTER, AMERICA, LLC, TEL Technology Center, America, LLC
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Christophe Vallee
TEL TECHNOLOGY CENTER, AMERICA, LLC
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Atomic Layer Etching of Silicon in HBr-Containing Plasmas
ORAL
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Presenters
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Vincent Donnelly
University of Houston
Authors
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Vincent Donnelly
University of Houston
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Qinzhen Hao
University of Houston
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Pilbum Kim
Samsung Electronics Co. Ltd.
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Song-Yung Kang
Samsung Electronics Co. Ltd.
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Sang Ki Nam
Samsung Electronics Co. Ltd., Mechatronics Research, Samsung Electronics
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OES-based Monitoring Method of Non-maxwellian EEDF and Radical Density for Etch Process Control in Ar/SF6/O2 VHF-CCP
ORAL
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Presenters
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Ji-Won Kwon
Seoul Nat'l Univ., Seoul National University
Authors
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Ji-Won Kwon
Seoul Nat'l Univ., Seoul National University
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Jihoon Park
Seoul Nat'l Univ.
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Ingyu Lee
Seoul Nat'l Univ.
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Gon-Ho Kim
Seoul Nat'l Univ., Seoul National University
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