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Plasma Etching

FOCUS · ER2 · ID: 550099





Presentations

  • Low Bias Frequencies for High Aspect Ratio Plasma Etching

    ORAL

    Presenters

    • Evan Litch

      University of Michigan

    Authors

    • Evan Litch

      University of Michigan

    • Hyunjae Lee

      Mechatronics Research, Samsung Electronics Co., Mechatronics Research, Samsung Electronics Co., Ltd.,

    • Sang Ki Nam

      Mechatronics Research, Samsung Electronics Co., Mechatronics Research, Samsung Electronics Co., Ltd.,

    • Mark J Kushner

      University of Michigan, Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave, Ann Arbor, MI 48109-2122, United States of America

    View abstract →

  • Effects of the focus ring on uniformity in capacitively coupled plasma etching reactors

    ORAL

    Presenters

    • Fang-Fang Ma

      Dalian University of Technology

    Authors

    • Fang-Fang Ma

      Dalian University of Technology

    • Quan-Zhi Zhang

      Dalian University of Technology, Dalian University of Technology, China

    • Jing-Yu Sun

      Dalian University of Technology, Dalian University of Technology, China

    • You-Nian Wang

      Dalian University of Technology, Dalian University of Technolpgy, Dalian University of Technology, China

    View abstract →

  • Development of virtual metrology using plasma information to predict mask shape in HAR etch process

    ORAL

    Presenters

    • Jaemin Song

      Department of Energy Systems Engineering, Seoul National University, Seoul 08826, Korea, Department of Energy Systems Engineering, Seoul National University, Seoul, South Korea

    Authors

    • Jaemin Song

      Department of Energy Systems Engineering, Seoul National University, Seoul 08826, Korea, Department of Energy Systems Engineering, Seoul National University, Seoul, South Korea

    • Namjae Bae

      Department of Energy Systems Engineering, Seoul National University, Seoul, South Korea

    • Jihoon Park

      Department of Energy Systems Engineering, Seoul National University, Seoul 08826, Korea, Department of Energy Systems Engineering, Seoul National University, Seoul, South Korea

    • Taejun Park

      Department of Energy Systems Engineering, Seoul National University, Seoul 08826, Korea, Department of Energy Systems Engineering, Seoul National University, Soeul, South Korea

    • Ji-Won Kwon

      Department of Energy Systems Engineering, Seoul National University, Soeul, South Korea

    • Sangwon Ryu

      Department of Energy Systems Engineering, Seoul National University, Seoul, South Korea

    • Ingyu Lee

      Department of Energy Systems Engineering, Seoul National University, Seoul, South Korea

    • Gon-Ho Kim

      Department of Energy Systems Engineering, Seoul National University, Seoul 08826, Korea, Department of Energy Systems Engineering, Seoul National University, Seoul, South Korea

    View abstract →

  • Ar plasma nanostructuring of PTFE for the wettability transition from hydrophobic to superhydrophobic and hydrophilic surfaces

    ORAL

    Publication: [1] V. Pachchigar, U.K. Gaur, A. T. V., S. K. P., S. Hans, S.K. Srivastava, M. Ranjan, Hydrophobic to superhydrophobic and hydrophilic transitions of Ar plasma-nanostructured PTFE surfaces, Plasma Process. Polym. n/a (2022) e2200037. doi:https://doi.org/10.1002/ppap.202200037.<br>[2] V. Pachchigar, M. Ranjan, K.P. Sooraj, S. Augustine, D. Kumawat, K. Tahiliani, S. Mukherjee, Self-cleaning and bouncing behaviour of ion irradiation produced nanostructured superhydrophobic PTFE surfaces, Surf. Coatings Technol. 420 (2021) 127331. doi:https://doi.org/10.1016/j.surfcoat.2021.127331.

    Presenters

    • Vivek Pachchigar

      Institute for Plasma Research, Bhat

    Authors

    • Vivek Pachchigar

      Institute for Plasma Research, Bhat

    • Umesh K Gaur

      Institute for Plasma Research

    • Sooraj K. P.

      Institute for Plasma Research

    • Sukriti Hans

      Institute for Plasma Research

    • Mukesh Ranjan

      Institute for Plasma Research

    View abstract →

  • Achieving selective etching of SiN and SiO<sub>2</sub> over amorphous carbon during CF<sub>4</sub>/H<sub>2</sub> by controlling substrate temperature

    ORAL

    Presenters

    • Shih-Nan Hsiao

      Center for Low-temperature Plasma Sciences, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan., Nagoya University, Nagoya Univ

    Authors

    • Shih-Nan Hsiao

      Center for Low-temperature Plasma Sciences, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan., Nagoya University, Nagoya Univ

    • Thi-Thuy-Nga Nguyen

      Nagoya University

    • Takayoshi Tsutsumi

      Nagoya University, Nagoya Univ

    • Kenji Ishikawa

      Nagoya Univ, Nagoya University, Nagoya University, Japan

    • Makoto Sekine

      Nagoya University, Nagoya Univ

    • Masaru Hori

      Nagoya Univ, Nagoya University, Center for Low-temperature Plasma Sciences, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan.

    View abstract →