Plasma Etching
FOCUS · ER2 · ID: 550099
Presentations
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Low Bias Frequencies for High Aspect Ratio Plasma Etching
ORAL
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Presenters
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Evan Litch
University of Michigan
Authors
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Evan Litch
University of Michigan
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Hyunjae Lee
Mechatronics Research, Samsung Electronics Co., Mechatronics Research, Samsung Electronics Co., Ltd.,
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Sang Ki Nam
Mechatronics Research, Samsung Electronics Co., Mechatronics Research, Samsung Electronics Co., Ltd.,
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Mark J Kushner
University of Michigan, Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave, Ann Arbor, MI 48109-2122, United States of America
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Effects of the focus ring on uniformity in capacitively coupled plasma etching reactors
ORAL
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Presenters
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Fang-Fang Ma
Dalian University of Technology
Authors
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Fang-Fang Ma
Dalian University of Technology
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Quan-Zhi Zhang
Dalian University of Technology, Dalian University of Technology, China
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Jing-Yu Sun
Dalian University of Technology, Dalian University of Technology, China
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You-Nian Wang
Dalian University of Technology, Dalian University of Technolpgy, Dalian University of Technology, China
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Development of validated fluorocarbon plasma chemistry for multi-dimensional modeling of semiconductor plasma etch processes
ORAL · Invited
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Publication: D. Levko, C. Shukla, R. R. Upadhyay, and L. L. Raja, J. Vac. Sci. Technol. B 39, 042202 (2021)<br>D. Levko, C. Shukla, and L. L. Raja, J. Vac. Sci. Technol. B 39, 062204 (2021)
Presenters
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Dmitry Levko
Esgee Technologies
Authors
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Dmitry Levko
Esgee Technologies
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Development of virtual metrology using plasma information to predict mask shape in HAR etch process
ORAL
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Presenters
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Jaemin Song
Department of Energy Systems Engineering, Seoul National University, Seoul 08826, Korea, Department of Energy Systems Engineering, Seoul National University, Seoul, South Korea
Authors
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Jaemin Song
Department of Energy Systems Engineering, Seoul National University, Seoul 08826, Korea, Department of Energy Systems Engineering, Seoul National University, Seoul, South Korea
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Namjae Bae
Department of Energy Systems Engineering, Seoul National University, Seoul, South Korea
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Jihoon Park
Department of Energy Systems Engineering, Seoul National University, Seoul 08826, Korea, Department of Energy Systems Engineering, Seoul National University, Seoul, South Korea
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Taejun Park
Department of Energy Systems Engineering, Seoul National University, Seoul 08826, Korea, Department of Energy Systems Engineering, Seoul National University, Soeul, South Korea
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Ji-Won Kwon
Department of Energy Systems Engineering, Seoul National University, Soeul, South Korea
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Sangwon Ryu
Department of Energy Systems Engineering, Seoul National University, Seoul, South Korea
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Ingyu Lee
Department of Energy Systems Engineering, Seoul National University, Seoul, South Korea
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Gon-Ho Kim
Department of Energy Systems Engineering, Seoul National University, Seoul 08826, Korea, Department of Energy Systems Engineering, Seoul National University, Seoul, South Korea
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Electron-assisted photoresist etching in an inductively coupled oxygen plasma via low-energy electron beam
ORAL
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Presenters
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Jiwon Jung
Hanyang university, Hanyang University
Authors
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Jiwon Jung
Hanyang university, Hanyang University
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Chin-Wook Chung
Hanyang university, Hanyang University, Hanyang Univ
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Ar plasma nanostructuring of PTFE for the wettability transition from hydrophobic to superhydrophobic and hydrophilic surfaces
ORAL
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Publication: [1] V. Pachchigar, U.K. Gaur, A. T. V., S. K. P., S. Hans, S.K. Srivastava, M. Ranjan, Hydrophobic to superhydrophobic and hydrophilic transitions of Ar plasma-nanostructured PTFE surfaces, Plasma Process. Polym. n/a (2022) e2200037. doi:https://doi.org/10.1002/ppap.202200037.<br>[2] V. Pachchigar, M. Ranjan, K.P. Sooraj, S. Augustine, D. Kumawat, K. Tahiliani, S. Mukherjee, Self-cleaning and bouncing behaviour of ion irradiation produced nanostructured superhydrophobic PTFE surfaces, Surf. Coatings Technol. 420 (2021) 127331. doi:https://doi.org/10.1016/j.surfcoat.2021.127331.
Presenters
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Vivek Pachchigar
Institute for Plasma Research, Bhat
Authors
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Vivek Pachchigar
Institute for Plasma Research, Bhat
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Umesh K Gaur
Institute for Plasma Research
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Sooraj K. P.
Institute for Plasma Research
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Sukriti Hans
Institute for Plasma Research
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Mukesh Ranjan
Institute for Plasma Research
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Achieving selective etching of SiN and SiO<sub>2</sub> over amorphous carbon during CF<sub>4</sub>/H<sub>2</sub> by controlling substrate temperature
ORAL
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Presenters
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Shih-Nan Hsiao
Center for Low-temperature Plasma Sciences, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan., Nagoya University, Nagoya Univ
Authors
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Shih-Nan Hsiao
Center for Low-temperature Plasma Sciences, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan., Nagoya University, Nagoya Univ
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Thi-Thuy-Nga Nguyen
Nagoya University
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Takayoshi Tsutsumi
Nagoya University, Nagoya Univ
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Kenji Ishikawa
Nagoya Univ, Nagoya University, Nagoya University, Japan
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Makoto Sekine
Nagoya University, Nagoya Univ
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Masaru Hori
Nagoya Univ, Nagoya University, Center for Low-temperature Plasma Sciences, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan.
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