Modeling and Simulation of Plasmas for Etch Applications

Modeling and simulation of plasma sources is an integral component in the development of industrial plasma processing hardware and in the characterization and optimization of its operation. Here we consider the use of simulation in the context of commercial etch applications, focusing on inductively-coupled (ICP) and capacitively-coupled (CCP) plasma sources. This will cover the types of simulations frequently used along with discussion of benefits and limitations, followed by design considerations for the hardware and their implications. Process complexity will also be explored in the context of a looped, multi-step etch process with variation in pulsed (power-modulated) plasma schemes. Key metrics to be explored include charged and neutral species uniformities, ion energy and angular distributions, and ion-to-neutral flux ratios as well as their impact on etched features.