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Incorporating Electronegative Feedback Mechanisms in a Global Plasma Circuit Model for Pulsed Power Delivery

ORAL

Abstract

Pulsed inductively coupled plasmas (ICP) have been of interest in the semiconductor industry given their ability to reduce substrate damage and modulate key parameters such as electron density ne, electron temperature Te, and plasma potential Vp. For an electropositive plasma, in the power ON-Cycle of a pulse, these discharges are typically characterized by a sharp increase in Te, and ne, as well as a corresponding decrease or increase in the reflection coefficient (Γ), depending on the match settings­. In previous work, a Matlab based Global Plasma Circuit Model (GPCM) has successfully been employed at characterizing these transients for argon. This work presents computational results from GPCM with an SF6 Plasma and benchmarks them with hairpin and photodiode taken on the Inductively Coupled Argon Oxygen System (ICAROS). Modifications to the equivalent transformer model are also incorporated, such that electronegative effects such as electron attachment instabilities (EAI’s) can be accounted for. Finally, the role that match effects has on inducing these EAI’s are also explored, as it has been observed that modulating the topology of the match can change the behavior of instabilities.

Presenters

  • Carl L Smith

    North Carolina State University

Authors

  • Carl L Smith

    North Carolina State University

  • Sang Ki Nam

    Samsung Electronics, Samsung Mechatronics R&D center, Samsung Mechatronics R&D Center, Samsung Electronics Co.

  • Hoki Lee

    Samsung Mechatronics R&D center, Samsung Mechatronics R&D Center

  • Jang-Yeob Lee

    Samsung Mechatronics R&D Center

  • Steven Shannon

    North Carolina State University