Characterizing Gate Defined Quantum Dots In A Mesa-Etched Silicon Nanowire

A gate-defined quantum dot (QD) is an isolated region of a semiconductor where electrons can be confined. Isolation is attained through the application of electric fields via gate electrodes that form tunnel barriers in the semiconductor. We present transport measurements of a mesa-etched silicon nanowire with conformal gates. The design of this device is intended to enable operation as a single QD or a series double quantum dot. We tuned this device to explore multiple operation regimes with the intention of investigating noise sources in this system.