Hall mobility data on Zinc Tin Nitride thin films prepared by MOCVD

Zinc Tin Nitride (ZnSnN₂) is an emerging ternary nitride semiconductor which can be a possible alternative to InGaN₂ in prospective optoelectronic devices. The II-IV-nitride compounds can be thought of as derived from the parent III-nitride compounds, where pairs of column III atoms are replaced with a Sn and a Zn atom. Key advantages of ZnSnN₂ over InGaN₂ include the property that disorder on the cation sublattice affects the band gap (through a range of the visible spectrum), and is is composed of earth-abundant and nontoxic elements. Most research on thin films of ZnSnN₂ have been on material prepared by Molecular Beam Epitaxy or sputtering, and the understanding of basic properties and defect physics is still developing. Here we present some temperature-dependent electrical transport properties on films prepared by Metal-Organic Chemical Vapor Deposition on a variety of substrates. Using the van der Pauw approach, we have measured the Hall effect and electrical resistivity from 10 K to 300K. Our analysis of Hall mobility includes models that incorporate the effects of both charged and neutral defects to explain the data.