Adsorbate Induced Resistivity Changes of Thin Au(111) films in Ultra High Vacuum

Changes in resistance of a thin Au(111) film were measured using a four-probe, lock-in technique while dosing with diethyl disulfide. In a vacuum chamber with a base pressure of 2.5 x 10^-10 Torr, the sample was sputter cleaned using Ar ions followed by an anneal cycle which heated the thin film to ~500℃. The adsorbate-induced change in resistance was used to determine the fractional change in resistivity of the sample. Through multiple experiments the fractional change in resistivity was determined to be in the range of 0.019% ± .002% to 0.621% ± .002%.