Effective Conductivity in Thin Copper Film Growth with Au Sputtered Contacts

A Si (100) wafer cleaned in acetone and methanol was placed into a sputter coater where gold contacts were deposited. A 72 nm Cu film was then grown on the Si in a thermal evaporator using 99.9999% Cu wire. The resistivity of the film was measured during growth. The Fuchs-Sondheimer Scattering Model was used to analyze the effective conductivity as a function of thickness. The model only fits our data over a very narrow range of thickness. Fit parameters were l = 13.3 nm, σ₀ = 21.4 (μΩm)^-1, and t₀ = 32.4 nm. More experiments are needed to study how the gold sputtered contacts affect the electrical measurements.