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Laser-ion-doping and qubit synthesis in semiconductors

ORAL

Abstract



Intense ion pulses from laser acceleration can damage, dope, heat and anneal semiconductors in one step. Excitation during nanosecond ion pulses is followed by rapid quenching on a microsecond time scale where desired phases and defect structures can stabilize. We report on direct formation of quantum defects in silicon and diamond samples processed with ion pulses from laser acceleration at the BELLA Center [1] and at the PHELIX facility (GSI) [2]. We characterized the ex situ quantum defect optical spectra, structural and compositional changes in the samples. In situ time-resolved ion current measurements at the BELLA Center 100 TW laser show a dual pulse structure with MeV ions from target normal sheath acceleration, followed by low energy ions from plasma expansion of the laser foil. Boron concentrations up to several atomic percent are observed in the samples from PW shots with boron foils, which enable the formation of a superconducting phase. We will discuss next steps in laser-ion doping optimization and color center qubit integration based on our recent results [1-5].

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Publication: [1] W. Redjem, et al., Commun. Mater. 4, 22 (2023)<br>[2] Note: Our closely related LaserNetUS experiment (K174) was performed at Titan (LLNL) June 5-23, 2023<br>[3] V. Ivanov, et al., Physical Review B 106, 134107 (2022)<br>[4] T. Schenkel, et al., Quantum Beam Science 6,13 (2022)<br>[5] W. Liu, et al., arXiv preprint arXiv:2302.05814 (2023) (Accepted by Phys. Rev. Appl.)

Presenters

  • Wei Liu

    ATAP, Lawrence Berkeley National Lab, Accelerator Technology & Applied Physics, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA, USA

Authors

  • Wei Liu

    ATAP, Lawrence Berkeley National Lab, Accelerator Technology & Applied Physics, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA, USA

  • Kaushalya Jhuria

    Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Lawrence Berkeley National Laboratory

  • Qing Ji

    Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Lawrence Berkeley National Laboratory

  • Arun Persaud

    Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Lawrence Berkeley National Laboratory

  • Vsevolod Ivanov

    Molecular Foundry, Lawrence Berkeley National Laboratory, Lawrence Berkeley National Lab

  • Walid Redjem

    Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA

  • Yertay Zhiyenbayev

    Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, University of California, Berkeley

  • Boubacar Kante

    Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA

  • Liang Z Tan

    Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, Lawrence Berkeley National Laboratory

  • Cameron Geddes

    Lawrence Berkeley National Laboratory

  • Tobias Ostermayr

    Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Lawrence Berkeley National Laboratory

  • Robert Jacob

    Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Accelerator Technology & Applied Physics, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA, USA, Lawrence Berkeley National Laboratory

  • Jeroen v van Tilborg

    Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Accelerator Technology & Applied Physics, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA, USA, Lawrence Berkeley National Laboratory

  • Sahel Hakimi

    Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Lawrence Berkeley National Laboratory

  • Anthony Gonvsalves

    Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory

  • Vincent Bagnoud

    GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstraße, GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstraße 1, 64291 Darmstadt, Germany, Technische Universität Darmstadt

  • Johannes Hornung

    GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstraße

  • Pascal Boller

    GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstraße, GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstraße 1, 64291 Darmstadt, Germany; Technische Universität Darmstadt, Institut für Kernphysik, Darmstadt, Germany

  • Zhao Hao

    Earth and Environmental Sciences, Lawrence Berkeley National Laboratory

  • Thomas Schenkel

    Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Lawrence Berkeley National Laboratory