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Optimization of light-emitting defects in silicon with plasmas, ion beams, and lasers

ORAL

Abstract

Light-emitting defects (or color centers) in semiconductors are promising qubit candidates for applications in quantum sensing and quantum communication. Color centers often form when dopants are introduced into the host crystal matrix combined with energetic radiation and thermal annealing. Quantum information science (QIS) applications benefit from high

quality color centers that can be formed reliably and this poses new challenges and opportunities for material processing including with ion beams and plasmas. We report on the synthesis of high-quality color centers using terawatt to petawatt laser-plasma-driven ion beams to implant selected elements including boron, titanium, and carbon into silicon. Color centers, including qubit candidates such as W, G, and C-centers in silicon, form directly under these conditions of laser-ion doping.

Color center synthesis with the laser-ion plasma-driven approach complements and can be combined with processing methods including conventional ion implantation, thermal annealing, exposure to H2 plasmas, and fs lasers for local formation and passivation of high-quality color centers. We outline directions toward scalable integration of color centers in silicon for applications in QIS.

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Publication: References<br>[1] Redjem, W., et al. Defect engineering of silicon with ion pulses from laser acceleration. Commun Mater 4, 22 (2023).<br>[2] Redjem, W., Zhiyenbayev, Y., Qarony, W. et al. All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity. Nat Commun 14, 3321 (2023).<br>[3] Jhuria, K., et al. Programmable quantum emitter formation in silicon, arXiv:2307.05759.

Presenters

  • Kaushalya Jhuria

    Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Lawrence Berkeley National Laboratory

Authors

  • Kaushalya Jhuria

    Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Lawrence Berkeley National Laboratory

  • Arun Persaud

    Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Lawrence Berkeley National Laboratory

  • Debanjan Polley

    EECS, University of California, Berkeley, CA 94720, USA; Department of Physics and Nanotechnology, SRM Institute of Sci. Chennai India

  • Jeffrey Bokor

    Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA

  • Johannes Hornung

    GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstraße 1, 64291 Darmstadt, Germany, GSI Helmholtzzentrum für Schwerionenforschung

  • Jeroen v van Tilborg

    Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Accelerator Technology & Applied Physics, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA, USA, Lawrence Berkeley National Laboratory

  • Liang Z Tan

    Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, Lawrence Berkeley National Laboratory

  • Pascal Boller

    GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstraße, GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstraße 1, 64291 Darmstadt, Germany; Technische Universität Darmstadt, Institut für Kernphysik, Darmstadt, Germany

  • Prabin Parajuli

    Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA

  • Qing Ji

    Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Lawrence Berkeley National Laboratory

  • Robert Jacob

    Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Accelerator Technology & Applied Physics, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA, USA, Lawrence Berkeley National Laboratory

  • Tobias Ostermayr

    Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Lawrence Berkeley National Laboratory

  • Vsevolod Ivanov

    Molecular Foundry, Lawrence Berkeley National Laboratory, Lawrence Berkeley National Lab

  • Vincent Bagnoud

    GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstraße, GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstraße 1, 64291 Darmstadt, Germany, Technische Universität Darmstadt

  • Walid Redjem

    Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA

  • Wayesh Qarony

    Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA

  • Wei Liu

    ATAP, Lawrence Berkeley National Lab, Accelerator Technology & Applied Physics, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA, USA

  • Yertay Zhiyenbayev

    Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, University of California, Berkeley

  • Yevgeny Raitses

    US Dept of Energy-Germantown, Princeton Plasma Physics Laboratory, Princeton Plasma Physics Laboratory, Princeton, NJ 08540, Princeton Plasma Physics Laboratory, Princeton University

  • Boubacar Kante

    Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA

  • Thomas Schenkel

    Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Lawrence Berkeley National Laboratory