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Laser ion implantation into Si and Diamond for Superconductivity and Quantum information applications

ORAL

Abstract

We report on the use of PW to TW laser-driven ion beams to implant various elements including boron and hydrocarbons into silicon and diamond for superconductivity and quantum telecommunication applications. We observe boron concentrations up to ~1.4x1022/cm3 when boron ions from a PW laser-driven ion pulse were implanted into silicon, corresponding to a fluence of ~1016 boron ions/cm2/shot. Time-resolved current measurements with 100 TW class laser shots show a very intense plasma expansion pulse of low energy ions (<1 keV) that trails the pulse of high energy ions from target normal sheath acceleration. Color centers, including qubit candidates such as G-centers in silicon, form directly under these conditions of intense (dual)-ion pulse irradiation and laser-ion doping. Very high boron concentrations can increase the transition temperature for superconductivity (from ~0.5 K in silicon and ~7 K in diamond) and we will report results from temperature dependent resistivity studies together with results from color center characterization.

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Presenters

  • Kaushalya Jhuria

    Lawrence Berkeley National Laboratory, ATAP, Lawrence Berkeley National Lab

Authors

  • Kaushalya Jhuria

    Lawrence Berkeley National Laboratory, ATAP, Lawrence Berkeley National Lab

  • Wei Liu

    Lawrence Berkeley National Laboratory, ATAP, Lawrence Berkeley National Lab

  • Zhihao Qin

    Lawrence Berkeley National Laboratory

  • Arun Persaud

    Lawrence Berkeley National Laboratory, ATAP, Lawrence Berkeley National Lab

  • Qing Ji

    Lawrence Berkeley National Laboratory, ATAP, Lawrence Berkeley National Lab

  • Tobias Ostermayr

    Lawrence Berkeley National Laboratory, ATAP, Lawrence Berkeley National Lab

  • Robert Jacob

    Lawrence Berkeley National Laboratory, ATAP, Lawrence Berkeley National Lab

  • Jeroen V van Tilborg

    Lawrence Berkeley National Laboratory, ATAP, Lawrence Berkeley National Lab

  • Sahel Hakimi

    Lawrence Berkeley National Laboratory, ATAP, Lawrence Berkeley National Lab

  • Vincent Bagnoud

    GSI Helmholtz Centre for Heavy Ion Research, GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstraße 1, 64291 Darmstadt, Germany, GSI Helmholtzzentrum für Schwerionenforschung

  • Johannes Hornung

    GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstraße 1, 64291 Darmstadt, Germany

  • Pascal Boller

    GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstraße 1, 64291,Technische Universität Darmstadt, Institut für Kernphysik, Schloßgartenstraße 9, 64289, Darmstadt, DE

  • Thomas Schenkel

    Lawrence Berkeley National Laboratory, ATAP, Lawrence National Berkeley Lab