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Plasma processing for color center qubit optimization - simulations and experiments

POSTER

Abstract

Color centers in semiconductors are promising qubits for applications in quantum sensing and quantum communication. Color centers often form when dopants are introduced into the host crystal matrix combined with energetic radiation and thermal annealing. QIS applications benefit from color centers that can be formed reliably of high quality and this poses new challenges and opportunities for materials processing including with ion beams and plasmas. We utilize EDIPIC-2D, a simulation code that is parallelized, to estimate the energy and particle distribution for a variety of hydrogen plasma conditions. We report on plasma simulations that inform experiments on plasma doping and color center formation and on experimental results from color center characterization in silicon and diamond.

Presenters

  • Kaushalya Jhuria

    Lawrence Berkeley National Laboratory, ATAP, Lawrence Berkeley National Lab

Authors

  • Kaushalya Jhuria

    Lawrence Berkeley National Laboratory, ATAP, Lawrence Berkeley National Lab

  • Arun Persaud

    Lawrence Berkeley National Laboratory, ATAP, Lawrence Berkeley National Lab

  • Wei Liu

    Lawrence Berkeley National Laboratory, ATAP, Lawrence Berkeley National Lab

  • Qing Ji

    Lawrence Berkeley National Laboratory, ATAP, Lawrence Berkeley National Lab

  • Alexander V Khrabrov

    Princeton Plasma Physics Laboratory, Princeton, Princeton University, USA, Princeton Plasma Physics Laboratory

  • Igor D Kaganovich

    Princeton Plasma Physics Laboratory, Princeton Plasma Physics Laboratory, Princeton, Princeton University, USA

  • Thomas Schenkel

    Lawrence Berkeley National Laboratory, ATAP, Lawrence National Berkeley Lab