Using GITR to simulate and predict performance of silicon carbide as first-wall material in DIII-D.
POSTER
Abstract
A. Dea, Z. Bergstromb, J. Guterlb, S. Bringuierb, T. Abramsb and Dmitry Rudakovc
a) Oak Ridge Associated Universities, Oak Ridge, TN 37830, USA
b) General Atomics, San Diego, CA 92186, USA
c) University of California, San Diego, La Jolla, CA 92093, USA
Simulations of the transport and re-deposition of low-Z impurities in the scrape-off-layer are being conducted with the Monte Carlo plasma-materials interactions code GITR to study the evolution of silicon carbide (SiC) as a plasma-facing material. To that end, GITR is being upgraded to handle low-Z chemically reactive plasma impurities such as C and Si. A reduced semi-analytical surface model that tracks the surface composition of the material interacting with the main plasma ions and the impurities has been implemented into GITR, similar to the homogeneous mixed material model used in ERO1.0. This surface model is used to calculate chemical and physical sputtering fluxes and the re-deposition of Si and C impurities onto plasma-facing components. The validation of this reduced surface model is performed through comparison with binary collisional approximation (BCA) codes, such as RustBCA. Finally, the erosion and re-deposition of SiC material, exposed to L-mode attached plasma in the lower divertor of DIII-D using DiMES, are modeled using GITR in conjunction with this newly developed surface model. Uncertainty quantification is applied to those simulations and consequences for predictive simulations of SiC performances as first wall material are discussed.
a) Oak Ridge Associated Universities, Oak Ridge, TN 37830, USA
b) General Atomics, San Diego, CA 92186, USA
c) University of California, San Diego, La Jolla, CA 92093, USA
Simulations of the transport and re-deposition of low-Z impurities in the scrape-off-layer are being conducted with the Monte Carlo plasma-materials interactions code GITR to study the evolution of silicon carbide (SiC) as a plasma-facing material. To that end, GITR is being upgraded to handle low-Z chemically reactive plasma impurities such as C and Si. A reduced semi-analytical surface model that tracks the surface composition of the material interacting with the main plasma ions and the impurities has been implemented into GITR, similar to the homogeneous mixed material model used in ERO1.0. This surface model is used to calculate chemical and physical sputtering fluxes and the re-deposition of Si and C impurities onto plasma-facing components. The validation of this reduced surface model is performed through comparison with binary collisional approximation (BCA) codes, such as RustBCA. Finally, the erosion and re-deposition of SiC material, exposed to L-mode attached plasma in the lower divertor of DIII-D using DiMES, are modeled using GITR in conjunction with this newly developed surface model. Uncertainty quantification is applied to those simulations and consequences for predictive simulations of SiC performances as first wall material are discussed.
Presenters
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Aritra De
Oak Ridge Associated Universities
Authors
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Aritra De
Oak Ridge Associated Universities
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Zachary J Bergstrom
Los Alamos National Laboratory
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Jerome Guterl
General Atomics - San Diego
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Stefan A Bringuier
General Atomics - San Diego
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Tyler Abrams
General Atomics - San Diego, General Atomics
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Dmitry L Rudakov
UCSD, University of California San Diego, University of California, San Diego