Ion pulses from laser-plasma acceleration for materials processing

ORAL

Abstract

We report on ion acceleration at the BELLA PW laser (\textasciitilde 10$^{\mathrm{19}}$ W/cm$^{\mathrm{2}}$, up to 1 Hz). Proton and carbon ion pulses with intensities in the 10$^{\mathrm{12}}$ ion/shot range are characterized with a Thomson parabola for energies above 2 MeV. We quantify the flux of lower energy ions through implantation into silicon wafers and ex situ analysis and find that carbon ions with energies below 2 MeV are implanted with fluences of \textasciitilde 10$^{\mathrm{14}}$ atoms/cm$^{\mathrm{2}}$/shot. Intense ion pulses excite and heat targets, leading to evaporation of aluminum and annealing of defects in silicon. We discuss opportunities for materials processing and qubit synthesis with intense ion pulses from laser-plasma acceleration. The work is supported by the U.S. Department of Energy Office of Science, under Contract No. DE-AC02-05CH11231.

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Authors

  • T. Schenkel

    Lawrence Berkeley National Laboratory, Berkeley National Laboratory

  • S. Steinke

    Lawrence Berkeley National Laboratory, Berkeley National Laboratory

  • L. Obst-Huebl

    Lawrence Berkeley National Laboratory, Berkeley National Laboratory

  • Jian-Hui Bin

    Lawrence Berkeley National Laboratory

  • Qing Ji

    Lawrence Berkeley National Laboratory, Berkeley National Laboratory

  • Arun Persaud

    Lawrence Berkeley National Laboratory

  • Hussein Hijazi

    Rutgers University

  • Lennard C. Feldman

    Rutgers University

  • Kei Nakamura

    Lawrence Berkeley National Laboratory

  • Anthony Gonsalves

    Lawrence Berkeley National Laboratory, LBNL, Berkeley National Laboratory

  • Stepan S. Bulanov

    Lawrence Berkeley National Laboratory

  • Cameron G. R. Geddes

    Lawrence Berkeley National Laboratory

  • Carl Schroeder

    Lawrence Berkeley National Laboratory

  • Eric Esarey

    Lawrence Berkeley National Laboratory, LBNL, Berkeley National Laboratory