Exploring Role of Reynolds and Maxwell Stress towards shear layer formation in ETG turbulence dominated Large Laboratory Plasma

ORAL

Abstract

Shear flows are well known for transport reduction by decorrelating the turbulent eddies and hence study of mechanisms of spontaneous generation of shear flow is important. Electron Temperature Gradient (ETG) turbulence is successfully excited in finite beta, (β∼0.01-0.4 ) plasma of Large Volume Plasma Device (LVPD) having frequency and wavelength ordering, fci<f(2-15kHz)≪fce, k ρe≤1 and k ρi>1, where fci and fce are cyclotron frequencies and ρe, ρi are larmor radii of ion and electrons respectively. An E×B shear layer is observed at mid radius in LVPD. The steady state flow profile results from balance of divergence of net momentum flux with flow dissipation where the net momentum flux is made of sum of Reynolds and Maxwell stresses. It is often conjectured that Maxwell stress opposes Reynolds stress leading to weakening of zonal flows in electromagnetic turbulence. We aim to study the competing roles of Reynolds and Maxwell stresses towards shear layer formation in LVPD. Details of the novel findings will be discussed in the meeting.

Presenters

  • Prabhakar Srivastav

    Institute for Plasma Research, Bhat Gandhinagar, India, Homi Bhabha National Institute, Anushakti Nagar, Mumbai

Authors

  • Prabhakar Srivastav

    Institute for Plasma Research, Bhat Gandhinagar, India, Homi Bhabha National Institute, Anushakti Nagar, Mumbai

  • Rameswar Singh

    University of California San Diego, United States, University of California San Diego

  • Lalit Mohan Awasthi

    Institute for Plasma Research, Bhat Gandhinagar, India, Homi Bhabha National Institute, Anushakti Nagar, Mumbai

  • Amulya Kumar Sanyasi

    Institute for Plasma Research, Bhat Gandhinagar, India

  • Pankaj Kumar Srivastav

    Institute for Plasma Research, Bhat Gandhinagar, India

  • Ritesh Sugandhi

    Institute for Plasma Research, Bhat Gandhinagar, India, Homi Bhabha National Institute, Anushakti Nagar, Mumbai

  • Raghvendra Singh

    Advance Technology Center, NFRI, Daejeon, Rep. Korea