Modeling the Behavior of SONOS Devices using Experimental Results and GEANT4 Simulations

In recent years, it has been discovered that computer chips containing different types of transistors have measurable effects when heavy ions pass through them. This provides a new way to detect radiation in a relatively cheap way however the full extent of their capabilities are still being studied and explored. Previously, Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) chips were exposed to 78Kr, 14N, and 4He beams. In an effort to gain greater insight into the dependence on atomic number, chips were recently exposed to 40Ar, 22Ne, and 14N beams. The response of these transistors to heavy ions was also simulated in GEANT4. By combining the experimental results and GEANT simulations an analytical model has been developed to understand these devices. Results of the experiment and modeling will be presented.