Analysis of Particle Contamination in Plasma Enhanced Chemical Vapor Deposition Chamber Using Computational Fluid Dynamics

Defects arising from particle contamination in Plasma Enhanced Chemical Vapor Deposition (PECVD) chambers pose critical quality issues in semiconductor devices, significantly impacting their performance and reliability. In showerhead-type PECVD systems, the showerhead serves as both the gas distributor and electrode. Particles tend to form at the showerhead edges due to interactions between plasma, and particles can also be generated on the chamber wall because of the by-products. Periodic purging is essential to reduce particle contamination within the chamber, as particle behavior is influenced by temperature and pressure variations. Computational Fluid Dynamics (CFD) was employed to analyze the gas flow within the chamber under various pressure and temperature conditions. The simulation data guided our experiments, revealing that a pressure of 100 Torr and a temperature of 723 K are optimal for minimizing particle contamination. Our findings provide crucial insights for improving PECVD chamber designs and operational protocols, thereby enhancing the overall quality and reliability of semiconductor devices. By optimizing the operating conditions, manufacturers can achieve higher yields and better device performance, ultimately contributing to advancements in semiconductor technology.