Flow characteristics of a semiconductor fabrication plant using large eddy simulation

We investigate the flow characteristics of a semiconductor fabrication plant (FAB) using large eddy simulation with a dynamic-coefficient Vreman model. An immersed-boundary method is used for no-slip boundary condition at solid surfaces, and the momentum sink terms are included to model the pressure drop across the perforated floor of main FAB. The Reynolds number based on the velocity of fan-filter units (FFUs) and the mean height of machines is 67000. Inside the main FAB, the downward flows are dominantly induced by FFUs. However, upward flows are locally observed between FFUs, which are mainly due to the flow entrainment near jet flows induced by FFUs. Also, upward flows are found near the lateral ends of main FAB due to the presence of unperforated floor and wall. Below the main FAB (sub-FAB), the velocity magnitude is minimum at the middle region and maximum near the recirculation duct, because of the downward flow from the main FAB. Finally, we investigate the dispersion of air pollutant by varying source position, and the results will be provided during the presentation.