Stimulated Raman Adiabatic Passage for Charge Migration Control: A Case Study in Xe Ions

In this study, we propose a scheme for achieving quantum control through a modification of the fractional stimulated Raman adiabatic passage (f-STIRAP), and we outline a viable experimental setup to test it by controlling charge migration in Xe ions. Numerical simulations demonstrate near-perfect control over the superposition of two initially uncoupled states, each coupled to a third state via two Gaussian pulses of varied intensity and duration. This configuration is more practical in the context of ultrashort pulses compared to traditional f-STIRAP schemes. Furthermore, we show that a similar level of robust control can be attained using two pulses with identical envelopes, provided their relative phase can be precisely controlled. We propose an experimental setup to test this scheme using high harmonic generation and strong-field transient absorption in Xe ions.