High-fidelity all-electronic control of trapped-ion qubits
POSTER
Abstract
Electronic control of trapped-ion qubits offers a promising route towards a large-scale quantum computing processor. It has delivered some of the highest-fidelity quantum gates ever reported [1, 2] and is highly scalable as it allows integrating control signals directly into the trap chip. We present progress towards all-electronic control of trapped-ion qubits at Oxford Ionics, including a demonstration of high-fidelity two-qubit entangling gates with a duration of approximately 100 µs using an integrated microwave antenna. We thus reach the typical speed of laser-based gates in a highly scalable architecture.
[1] T. P. Harty et al., Phys. Rev. Lett. 117, 140501 (2016)
[2] R. Srinivas et al., Nature 597, pp 209-213 (2021)
[1] T. P. Harty et al., Phys. Rev. Lett. 117, 140501 (2016)
[2] R. Srinivas et al., Nature 597, pp 209-213 (2021)
Presenters
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Clemens Loschnauer
Oxford Ionics
Authors
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Clemens Loschnauer
Oxford Ionics
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Amy C Hughes
Oxford Ionics
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Raghavendra Srinivas
Oxford Ionics
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Jacopo Mosca Toba
Oxford Ionics
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Marius Weber
Oxford Ionics
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Maciej Malinowski
Oxford Ionics
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Roland Matt
Oxford Ionics
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Steven A King
Oxford Ionics
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Clemens Matthiesen
Oxford Ionics, Institute of Physics
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Thomas Harty
Oxford Ionics
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Chris Ballance
Oxford Ionics