Gate control of heavy hole spin in semiconductor quantum dots: Anisotropy effect
ORAL
Abstract
It is a notion that single heavy hole spin in semiconductor quantum dots can be manipulated with the application of electric fields, magnetic fields, and lateral size of the quantum dots. In symmetric heavy hole quantum dots, the spin-hot-spot, where decoherence time is significantly reduced, can be observed for the pure Dresselhaus spin-orbit coupling case and absent for the pure Rashba spin-orbit coupling case. In this poster presentation, we provide analytical and numerical results that show the spin-hot-spot can also be seen for the pure Rashba spin-orbit coupling case by inducing anisotropy through external gates. The results open the new possibilities for the design of a quantum computer based on the electric field control of single heavy hole spins in III-V semiconductor quantum dots.
[1] D. Bulaev and D. Loss, Phys. Rev. Letters 95, 076805 (2005)
[2] B. Ganjipour, M. Leijnse, L. Samuelson, H. Xu, C. Thelander, Phys. Rev. B 91, 161301 (2015).
[1] D. Bulaev and D. Loss, Phys. Rev. Letters 95, 076805 (2005)
[2] B. Ganjipour, M. Leijnse, L. Samuelson, H. Xu, C. Thelander, Phys. Rev. B 91, 161301 (2015).
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Presenters
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Sanjay Prabhakar
Northwest Missouri State University
Authors
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Sanjay Prabhakar
Northwest Missouri State University
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Joseph Zwiener
Northwest Missouri State University
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Dalton Forbes
Northwest Missouri State University
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Ruma De
Northwest Missouri State University, Maryville, USA, Northwest Missouri State University
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Himadri Chakraborty
Northwest Missouri State University, Maryville, USA, Northwest Missouri State University