Manipulating non-Hermitian skin effect via electric fields
POSTER
Abstract
In non-Hermitian systems, the phenomenon that the bulk-band eigenstates are accumulated at
the boundaries of the systems under open boundary conditions is called non-Hermitian skin effffect
(NHSE), which is one of the most iconic and important features of a non-Hermitian system. In this
work, we investigate the fate of NHSE in the presence of electric fifields by analytically calculating
the dynamical evolution of an initial bulk state and numerically computing the spectral winding
number, the distributions of eigenstates, as well as the dynamical evolutions. We show the abundant
manipulation effffects of dc and ac fifields on the NHSE, and the physical mechanism behind is the
interplay between the Stark localization, dynamic localization and the NHSE. In addition, the fifinite
size analysis of the non-Hermitian system with a pure dc fifield shows the phenomenon of size
dependent NHSE. The results will help to deepen the understanding of NHSE and its manipulation.
the boundaries of the systems under open boundary conditions is called non-Hermitian skin effffect
(NHSE), which is one of the most iconic and important features of a non-Hermitian system. In this
work, we investigate the fate of NHSE in the presence of electric fifields by analytically calculating
the dynamical evolution of an initial bulk state and numerically computing the spectral winding
number, the distributions of eigenstates, as well as the dynamical evolutions. We show the abundant
manipulation effffects of dc and ac fifields on the NHSE, and the physical mechanism behind is the
interplay between the Stark localization, dynamic localization and the NHSE. In addition, the fifinite
size analysis of the non-Hermitian system with a pure dc fifield shows the phenomenon of size
dependent NHSE. The results will help to deepen the understanding of NHSE and its manipulation.
Publication: arXiv:2201.10318
Presenters
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Jianwen Jie
Southern University of Science and Techn, Southern University of Science and Technology
Authors
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Jianwen Jie
Southern University of Science and Techn, Southern University of Science and Technology
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Yi Peng
Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology
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Yucheng Wang
Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology
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Dapeng Yu
Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology