Quantum sensing and simulations in a Penning ion trap

We summarize recent experimental work towards improved quantum sensing and simulations on 2D crystals of over a hundred ions stored in a Penning trap. Our most recent quantum sensing experiments demonstrated a displacement sensitivity of nearly 9dB below the standard quantum limit, which enabled an electric field sensitivity of 240 nV/m/Hz. Over the past year, we have been exploring different paths towards improved quantum sensing and simulations. Through parametric amplification of the axially center-of-mass mode, we should be able to amplify our sensitivity to small displacements and improve our entanglement generation time and fidelity. In order to explore more complicated quantum simulations, we are investigating a path towards single-site addressing of the ion's spin degree of freedom. To that end, we will show theory and experimental work that uses a deformable mirror to create variable AC Stark shifts to address a subgroup of ions.