Spatial carrier distribution, Energy subbands, and Potential profile calculation of a conducting interface LaVO₃/SrTiO₃using optical and transport measurement.

The carrier-density distribution near a conducting interface and related band structure is an essential topic of condensed matter physics. We propose a scheme combining Photoluminescence (PL) spectroscopy, time-correlated photon counting (TCSPC) with electrical measurements to reveal the distribution of the carriers, the shape of the quantum well, energy subbands, and Fermi surfaces of the conducting interface of LaVO₃ and SrTiO₃ (LVO/STO). Electronic properties such as carrier density, and mobility estimated from the electrical measurements are in excellent agreement with that estimated from optical spectroscopy-based methods through theoretical modeling. The proper knowledge of band structure can help us to understand the fascinating physics of “Rashba band splitting” due to high spin-orbit coupling which gives rise to the planar hall effect, non-trivial berry phase, etc.