Quantum defects at the Center of Integrated Nanotechnologies: Defect formation, quantum sensing, and quantum communication

Quantum defects are lattice vacancies, substitutions or combinations of the two that have promising properties for quantum information sciences: single photon emission, long coherence times, and integrability with devices. At the Center for Integrated Nanotechnologies (CINT), a DoE nanoscience research center, and Sandia National Laboratory, we have established capabilities of nitrogen-vacancy widefield imaging for nanoscale quantum sensing (room temperature to cryogenic temperatures) and capabilities for nano-implantation of across the periodic table at keV to MeV energies with nm to cm spot sizes. In this presentation, I will show our work from CINT scientists and users within the realm of quantum defects for fundamental and applied sciences, including magnetic imaging for device failure detection[1], novel ion implantation applications [2], toward the study of quantum materials [3, 4], under conventional and extreme environments such as high pressure, and open-source quantum hardware for quantum sensing [5].