Pt₃Sn Topological Semimetal for Low Resistivity Electrical Interconnects

As a topological semimetal, Pt₃Sn exhibits robust surface states that can result in low electrical resistance and high conductivity, making it ideal for efficient interconnects. Thin films of various compositions were produced by co-depositing Pt and Sn via magnetron sputtering. Power to the Sn target was adjusted to vary the Sn deposition rate to optimize the growth to produce the desired Pt₃Sn phase. Energy dispersive X-ray spectroscopy was employed to estimate the elemental composition, which indicated the 25at% Sn requirement had been met or exceeded. X-ray diffraction confirmed the presence of the desired topological phase, as well as the expected transition from Pt₃Sn to PtSn as the Sn composition increased. Resistivity versus thickness and low temperature transport measurements are planned for future work to fully understand the topological properties of Pt₃Sn.